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首页> 外文期刊>Thin Solid Films >First-principles predictions of ruthenium-phosphorus and ruthenium-boron glassy structures and chemical vapor deposition of thin amorphous ruthenium-boron alloy films
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First-principles predictions of ruthenium-phosphorus and ruthenium-boron glassy structures and chemical vapor deposition of thin amorphous ruthenium-boron alloy films

机译:钌-磷和钌-硼玻璃态结构的第一性原理预测以及非晶态钌-硼合金薄膜的化学气相沉积

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摘要

First-principles density-functional calculations are presented revealing that Ru(P) and Ru(B) alloys with moderate P or B content can result in a glassy structure exhibiting strong chemical short-to-medium range order. Amorphous phases are predicted to be energetically more favorable than the crystalline counterparts for the Ru(P) and Ru(B) alloys above similar to 20 at% P and similar to 10 at% B. The relative stability of amorphous and crystalline Ru(B) alloys is examined along with local atomic ordering in the amorphous alloys. The growth of ultrathin (3 nm) amorphous Ru(B) alloy films of varying B concentration via chemical vapor deposition is explored using Ru-3(CO)(12) and B2H6 as the Ru and B sources, respectively. Experiments reveal the films grown at 250 degrees C are amorphous at B contents in excess of 15 at% and polycrystalline below 10 at% B, consistent with first-principles predictions. Amorphous Ru(B) films remain amorphous following annealing at 450 degrees C and become polycrystalline at 500 degrees C. Film resistivity ranged from 40 to 120 mu Omega-cm and was independent of B loading. Electric field stress tests to failure for Cu/3-nm Ru(B)/SiO2/Si stacks are used to indicate suitability of Ru(B) as a copper diffusion barrier layer. (C) 2016 Elsevier By. All rights reserved.
机译:提出了第一性原理的密度函数计算,揭示了具有适度P或B含量的Ru(P)和Ru(B)合金可导致玻璃态结构表现出很强的化学中短程范围。预测非晶态相比Ru(P)和Ru(B)合金的晶态对应物在能量上更有利,高于上述Ru(P)和Ru(B)合金,其P近似为20 at%,B近似为10 at%。非晶态和晶体Ru(B)的相对稳定性合金与非晶态合金中的局部原子有序性一起进行了检查。分别使用Ru-3(CO)(12)和B2H6作为Ru和B的源,通过化学气相沉积研究了不同B浓度的超薄(3 nm)非晶态Ru(B)合金膜的生长。实验表明,在250摄氏度下生长的薄膜在B含量超过15 at%时是非晶态的,在B含量低于10 at%时多晶的,这与第一原理的预测一致。非晶态Ru(B)膜在450摄氏度下退火后仍保持非晶态,在500摄氏度下变为多晶。薄膜电阻率范围为40至120μOmega-cm,并且与B负载无关。 Cu / 3-nm Ru(B)/ SiO2 / Si叠层失效的电场应力测试用于表明Ru(B)作为铜扩散阻挡层的适用性。 (C)2016年Elsevier By。版权所有。

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