METHOD FOR MANUFACTURING A POSITIVE-CHANNEL MOS TRANSISTOR AND A METHOD FOR FORMING THE DUAL GATE OF A SEMICONDUCTOR DEVICE USING THE SAME, CAPABLE OF EFFECTIVELY DOPING A POLY-SILICON LAYER ON A GATE INSULATION LAYER

摘要

PURPOSE: A method for manufacturing a positive-channel MOS(PMOS) transistor and a method for forming the dual gate of a semiconductor device using the same are provided to prevent the formation of an oxide layer between a poly-silicon layer and a metal electrode layer.;CONSTITUTION: A gate insulation layer(510) is formed on a semiconductor substrate(500). A poly-silicon layer(520) is formed on the gate insulation layer. The poly-silicon layer is doped in an atomic layer deposition chamber or a chemical vapor deposition chamber with a boron-contained gas. The temperature in the chamber is between 50 and 450°C. A photo resist pattern(530) is formed on the poly-silicon layer.;COPYRIGHT KIPO 2010