SEMICONDUCTOR DEVICE CAPABLE OF IMPLEMENTING AN INDUCTOR WITH A HIGH Q-FACTOR AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase a use frequency band by reducing a parasitic capacitance between a substrate and a metal used as an inductor line.;CONSTITUTION: A substrate(100) has an air layer inside. An inter-layer insulating film is formed on the substrate. A metal wiring is formed on the interlayer insulating film corresponding to the air layer. The air layer is formed by a space formed inside the substrate and the space is connected to a plurality of trenches on the substrate. A thermal oxide film is formed along the upper side of the substrate, the sidewall of the trench and the inner wall of the space.;COPYRIGHT KIPO 2010