THIN FILM TRANSISTOR APPLYING AN OXIDE SEMICONDUCTOR THIN FILM DOPED WITH BORON, CAPABLE OF IMPROVING AN ELECTRIC PROPERTY

摘要

PURPOSE: A thin film transistor applying an oxide semiconductor thin film doped with boron and a manufacturing method thereof are provided to increase stability at high temperature by applying the oxide semiconductor thin film doped with boron to a channel layer.;CONSTITUTION: A source/drain electrode(20) is formed on a substrate(10). A channel layer(30) is formed on the source/drain electrode. A gate insulation layer(40) is formed on the channel layer. A gate electrode(50) is formed on the gate insulation layer. The channel layer is an oxide semiconductor thin film doped with boron. A channel protective layer(A) is formed on the upper side of the channel layer.;COPYRIGHT KIPO 2010