MIM CAPACITOR OF A SEMICONDUCTOR ELEMENT, CAPABLE OF FORMING A MIM STRUCTURE IN A HOLE, AND A FORMING METHOD THEREOF

摘要

PURPOSE: A MIM(Metal/Insulator/Metal) capacitor of a semiconductor element is provided to improve productivity by forming the structure of a MIM capacitor and following metal layer using a single process, thereby reducing a process.;CONSTITUTION: A first oxide film(200) is formed on a semiconductor substrate. An aluminum layer(202) is formed on the first oxide film. A lower part metal wiring is formed by depositing a mask on the aluminum layer, thereby executing a first etching. A second oxide film(206) is formed in the first oxide film and the front side of the aluminum layer. A hole is formed from the second oxide film to the lower part metal wiring area. A tungsten(204) is gap-filled in the hole as a conductive material.;COPYRIGHT KIPO 2010