METHOD FOR FORMING A MIM CAPACITOR OF A SEMICONDUCTOR DEVICE, CAPABLE OF IMPROVING A PROPERTY OF THE END PART OF A THIN FILM, AND A MIM CAPACITOR THEREOF

摘要

PURPOSE: A method for forming a MIM(Metal Insulator Metal) capacitor of a semiconductor device and a MIM capacitor thereof are provided to improve a property of the end part of a thin film.;CONSTITUTION: A photoresist pattern is formed on the top of an upper metal film for forming a MIM capacitor. The corner of the photoresist pattern is roundly processed by executing a corner rounding etching process for the photoresist pattern. An upper electrode(104') is formed by etching the upper metal film using the photoresist pattern where the corner rounding etching process is applied.;COPYRIGHT KIPO 2010