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METHOD FOR FABRICATING AN ISOLATION LAYER OF A SEMICONDUCTOR DEVICE, CAPABLE OF PREVENTING DISLOCATION GENERATED IN AN ELEMENT ISOLATION LAYER
METHOD FOR FABRICATING AN ISOLATION LAYER OF A SEMICONDUCTOR DEVICE, CAPABLE OF PREVENTING DISLOCATION GENERATED IN AN ELEMENT ISOLATION LAYER
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机译:制造半导体器件的隔离层的方法,其能够防止在元素隔离层中产生的错位
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摘要
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to suppress inside of an element isolation layer by growing a silicon substrate in epitaxial after forming a trench and implanting impurity into an epitaxial layer.;CONSTITUTION: A trench is formed in a semiconductor substrate(100). An epitaxial silicon layer is formed inside the trench by epitaxially growing the semiconductor substrate . A photoresist pattern(120) is formed on the epitaxial silicon layer. An impurity is inserted into the epitaxial silicon layer. The trench is gap-filled with an oxide. An element isolation film is formed by planarizing the oxide.;COPYRIGHT KIPO 2010
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