SEMICONDUCTOR DEVICE HAVING A TRENCH ISOLATION LAYER CAPABLE OF PREVENTING FILLING FAILURE AND A METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having a trench isolation layer and a method for fabricating the same are provided to minimize the generation of a stress due to a post thermal process without using a spin-on insulating layer or a floating insulation layer.;CONSTITUTION: A substrate (110) has a trench (130). A liner insulation layer (151) covers the lower and lateral surfaces of the trench. The sidewall of the liner insulation layer has an even thickness from a first depth (D1) to the bottom surface. A micro trench (152) and the lower part of the trench are filled with a first element isolation insulation layer (153). A trench on the first element isolation insulation layer is filled with a second element isolation insulation layer (155).;COPYRIGHT KIPO 2013