SILICIDE FORMING METHOD OF MOSFET OF A SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING THE RESISTIVITY OF THE SOURCE/DRAIN AND POLYGATE BETTERS AND IMPROVING THE SEMICONDUCTOR YIELD

摘要

PURPOSE: A silicide forming method of MOS FET of a semiconductor device is provided to minimize the change of a channel line width and junction leakage by forming a RTA process of the set temperature as silicide and the titanium/cobalt into multilayer in poly-gate and source/drain top.;CONSTITUTION: A poly-gate(104) is formed at the upper part of a silicon substrate(101) in which the active area and STI(102) are formed. A spacer wall(106) is formed in both side wall of the poly-gate. A hard doping ion injection process is enforced and the source/drain is formed by using the spacer wall and poly-gate as the ion implantation mask. A silicide blocking material is formed in the upper silicon substrate front side in which poly-gate and spacer wall are formed. A multi silicide material is formed in the upper silicon substrate front side in which the silicide blocking pattern(108a) is formed.;COPYRIGHT KIPO 2010