METHOD OF FORMING A PHASE CHANGE MEMORY DEVICE, CAPABLE OF MAINTAIN THE RESISTANCE OF A PHASE CHANGE MEMORY CELL OVER A SEMICONDUCTOR SUBSTRATE CONSTANT

摘要

PURPOSE: A method of forming a phase change memory device is provided to supply electrical bit to a phase change device by forming a void in the phase change memory cell.;CONSTITUTION: A first to third source gas(G1-G3) are inserted into a process chamber. The first source gas has a germanium precursor. A second source gas has an antimony precursor. A third source gas has a tellurium precursor. A reaction gas is inserted into a process chamber during the time of inserting the first to the third gas. A purge gas is inserted into the process chamber during the time of inserting the first to the third gas. A phase change material layer is filled into the opening the inter-layer insulating film of the semiconductor substrate.;COPYRIGHT KIPO 2011