METHOD FOR FORMING A PHASE CHANGE MEMORY UNIT CAPABLE OF IMPROVING A BOTTOM ELECTRODE STRUCTURE, A MANUFACTURING METHOD OF A PHASE CHANGE MEMORY DEVICE USING THE SAME, AND A PHASE CHANGE MEMORY DEVICE FORMED BY THE SAME

摘要

PURPOSE: A method for forming a phase change memory unit, a manufacturing method of a phase change memory device using the same, and a phase change memory device formed by the same are provided to prevent deterioration of a phase change material film.;CONSTITUTION: A conductive film is formed on a substrate(100) in which a trench is formed. A first electrode is formed by flattening a top part of the conductive film until a top surface of the substrate is exposed. A second spacer is formed, and covers a part of the first electrode. A phase change material film is formed on the first electrode and the second spacer. A second electrode is formed on the phase change material film.;COPYRIGHT KIPO 2010