PHASE-CHANGE MEMORY UNIT, METHOD OF FORMING THE PHASE-CHANGE MEMORY UNIT, PHASE-CHANGE MEMORY DEVICE HAVING THE PHASE-CHANGE MEMORY UNIT AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE

摘要

A phase-change memory unit, a manufacturing method thereof, a phase-change memory device having the same and a manufacturing method of a phase-change memory device are provided to reduce amount of metallic component diffused to a phase change material layer pattern by forming a transition metal film pattern between a phase change material layer and an upper electrode. A bottom electrode(120) is formed on the substrate. A phase change material layer pattern(152) is formed on the bottom electrode. The phase change material layer pattern comprises carbon and GST compound. A first transition metal film pattern(162) is formed on the phase change material layer pattern. An upper electrode(172) is formed on the first transition metal film pattern. The first transition metal film pattern comprises one or more selected from the group consisting of titanium(Ti), vanadium(V), chrome(Cr), manganese(Mn), iron(Fe), cobalt(Co), nickel(Ni), zirconium(Zr), niobium(Nb), molybdenum(Mo), ruthenium(Ru), rhodium(Rh), palladium(Pd), hafnium(Hf), tantalum(Ta), tungsten(W), rhenium(Re), osmium(Os), iridium(Ir) and platinum(Pt).