首页> 外国专利> FORMATION METHOD OF A SELF-ASSEMBLED MONOLAYER TO PREVENT THE VOID AND THE SEAM IN A COPPER WIRE OF A SEMICONDUCTOR DEVICE, AND A PRODUCING METHOD THE COPPER WIRE OF THE SEMICONDUCTOR DEVICE USING THEREOF

FORMATION METHOD OF A SELF-ASSEMBLED MONOLAYER TO PREVENT THE VOID AND THE SEAM IN A COPPER WIRE OF A SEMICONDUCTOR DEVICE, AND A PRODUCING METHOD THE COPPER WIRE OF THE SEMICONDUCTOR DEVICE USING THEREOF

机译:用于防止半导体器件的铜线中的空隙和缝隙的自组装单层膜的形成方法,以及利用该方法制造的半导体器件的铜线的制造方法

摘要

PURPOSE: A formation method of a self-assembled monolayer, and a producing method the copper wire of the semiconductor device using thereof are provided to secure the high reliability of the self-assembled monolayer by forming a copper seed film with the uniform thickness.;CONSTITUTION: A formation method of a self-assembled monolayer comprises the following steps: reforming a semiconductor substrate to have a hydrogen radical on the surface; irradiating UV rays to bond a Cl radical on the surface of the semiconductor substrate, while supplying Cl_2 gas; and supplying NH_3 gas to the surface of the semiconductor substrate to substitute the Cl radical to an amine radical.;COPYRIGHT KIPO 2011
机译:目的:提供一种自组装单分子层的形成方法,以及使用该方法的半导体器件的铜线的制造方法,以通过形成具有均匀厚度的铜籽晶膜来确保自组装单分子层的高可靠性。组成:自组装单层的形成方法包括以下步骤:重整半导体衬底使其表面具有氢自由基;在供给Cl_2气体的同时,照射紫外线以将Cl基键合在半导体衬底的表面上。并向半导体衬底的表面提供NH_3气体,以将Cl基团替换为胺基团。; COPYRIGHT KIPO 2011

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