STRAINED SILICON-ON-INSULATOR BY ANODIZATION OF A BURIED P+ SILICON GERMANUM LAYER

摘要

In a cost-effective method of manufacturing a strained semiconductor-on-insulator (SSOI) substrate without a wafer bonding is provided. The method comprises the steps of growing a number of epitaxial semiconductor layers on a substrate, at least one of the doped semiconductor layer is a strained semiconductor layer beneath the relaxed semiconductor cheungim -, converted into porous semiconductor deliver the doped semiconductor layer through the polarization process mitigation for that stage, and the porous oxide semiconductor layer comprises the step of conversion to the buried oxide layer. This is a relaxed semiconductor layer on the substrate; High-quality buried oxide layer on the relaxed semiconductor substrate; And provides a high quality, including a buried oxide layer on the strained semiconductor layer SSOI substrate. According to the invention, the semiconductor layer and the strained semiconductor layer have the same crystal orientation relaxation.