首页> 外国专利> Methods for manufacturing compound semiconductor and compound insulator using chemical reaction and diffusion by heating, and compound semiconductor and compound insulator manufactured using the method, and photocell, electric circuit, transistor, and memory using the same

Methods for manufacturing compound semiconductor and compound insulator using chemical reaction and diffusion by heating, and compound semiconductor and compound insulator manufactured using the method, and photocell, electric circuit, transistor, and memory using the same

机译:通过加热通过化学反应和扩散制造化合物半导体和化合物绝缘体的方法,以及使用该方法制造的化合物半导体和化合物绝缘体,以及使用该方法的光电池,电路,晶体管和存储器

摘要

method for producing a chemical reaction with the compound semiconductor and the insulator using a compound diffusion by heating , according to this method compound semiconductor , and an insulator compound , using this photovoltaic cell , an electronic circuit , and provides a transistor and a memory . Oxygen and / or sulfur relative to oxygen and / or sulfur between the dielectric layer comprising a highly reactive rare-earth transition metal layer forming a laminate structure of the intermediate layer is interposed , and the dielectric layer with each other to produce a chemical reaction and diffusion between the intermediate layer wherein by adjusting the heating temperature at the time of heating the laminated structure manufacturing a semiconductor compound and a compound insulator , and use them to the photovoltaic cell , an electronic circuit , to produce a transistor and a memory .
机译:化合物半导体和绝缘体的化学反应的方法,通过该化合物半导体和绝缘体化合物,通过加热通过化合物扩散,通过这种光伏电池,电子电路,并提供晶体管和存储器。相对于氧和/或硫的氧和/或硫介于介于形成中间层的层压结构的包括高反应性稀土过渡金属层的介电层之间,并且该介电层彼此发生化学反应,并且中间层之间的扩散,其中通过调节制造半导体化合物和复合绝缘体的层压结构的加热时的加热温度,并将它们用于光伏电池,电子电路,以产生晶体管和存储器。

著录项

  • 公开/公告号KR100970732B1

    专利类型

  • 公开/公告日2010-07-16

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20047015560

  • 发明设计人 김주호;토미나가준지;

    申请日2003-03-28

  • 分类号H01L21/31;H01L21/26;

  • 国家 KR

  • 入库时间 2022-08-21 18:31:00

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