机译:具有毫米波应用的高K /低K复合栅极介电层的AlGaN / GaN金属绝缘体半导体高电子迁移率晶体管的设计优化
University of Electronic Science and Technology of China, People's Republic China;
University of Electronic Science and Technology of China, People's Republic China;
University of Electronic Science and Technology of China, People's Republic China;
University of Electronic Science and Technology of China, People's Republic China;
University of Electronic Science and Technology of China, People's Republic China;
wide band gap semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; MIS devices; optimisation; permittivity;
机译:ZrO2的原子层沉积作为硅上的AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管的栅极电介质
机译:以原子层沉积的Al_2O_3为栅绝缘体的AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管的二维电子输运特性的改善
机译:具有非常高
机译:高k HfAlO栅极介电层的原子层沉积(ALD)功能增强了AlGaN / GaN金属氧化物半导体异质结场效应晶体管(MOSHFET)的性能
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积