Surface reformation method of Group ? nitride substrate, Group ? nitride substrate prepared therefrom, and nitride semiconductor light emitting device with the same

摘要

the active layer due to the influence of crystal defects by improving the non-uniform surface of the group III nitride substrate according to the crystal defects the light-emitting efficiency of the surface improving method for preventing nitride substrate decreases, prepared therefrom group relates to a nitride substrate and the nitride semiconductor light emitting device using the group III nitride substrate such . ; -nitride substrate for a nitride semiconductor light emitting device according to the invention is shown having a top surface crystal defects; Al to provide a top surface having a surface morphology improved than an upper surface of the substrate _X1 Ga _{1 -X1} N (0 & X1 & lt surface improving layer made of a single crystal layer of the first);; And improve the surface layer sequentially on the first conductive nitride semiconductor layer, an active layer and a light emitting structure comprising a second conductive nitride semiconductor layer. A single crystal of ; Al _X1 Ga _{1 -X1} N (1;; X1 & lt 0 & lt) in accordance with the present invention, by improving the surface layer of the layer, and the crystal defects generated in the substrate it can be prevented from affecting the active layer.