GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF USING SURFACE MORPHOLOGY OF HOMOGENEOUS NITRIDE SUBSTRATES

摘要

The present invention relates to a nitride -based semiconductor light-emitting device and its manufacturing method . More specifically, the cladding layer and the physical properties of the substrate used to grow the gallium nitride to form the cladding layer of the semiconductor light emitting device using the same substrate , such as to form irregularities on the surface of the substrate , between the substrate and the semiconductor layer prior will reduce the total reflection of the photons in the photon scattering and boundary elements on the light emission efficiency is improved semiconductor light emitting device and a method of manufacturing the same .