首页>
外国专利>
Gallium nitride based semiconductor light emitting device and method for manufacturing thereof using surface morphology of homogeneous nitride substrates
Gallium nitride based semiconductor light emitting device and method for manufacturing thereof using surface morphology of homogeneous nitride substrates
展开▼
机译:使用均质氮化物衬底的表面形态的氮化镓基半导体发光器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a nitride -based semiconductor light-emitting device and its manufacturing method . More specifically, the cladding layer and the physical properties of the substrate used to grow the gallium nitride to form the cladding layer of the semiconductor light emitting device using the same substrate , such as to form irregularities on the surface of the substrate , between the substrate and the semiconductor layer prior will reduce the total reflection of the photons in the photon scattering and boundary elements on the light emission efficiency is improved semiconductor light emitting device and a method of manufacturing the same .
展开▼