首页> 外国专利> Power semiconductor module for switching electrical load, has active and passive electrical elements made of semiconductor materials, and arranged on substrate common with power semiconductor or on homogeneous substrate as semiconductor

Power semiconductor module for switching electrical load, has active and passive electrical elements made of semiconductor materials, and arranged on substrate common with power semiconductor or on homogeneous substrate as semiconductor

机译:用于切换电负载的功率半导体模块,具有由半导体材料制成的有源和无源电气元件,并布置在与功率半导体相同的衬底上或作为半导体的均质衬底上

摘要

The module has an electrical connection between two load connections, and reciprocatably switched at a control input of a power semiconductor (1) between electrically connected and separated conditions. Active and passive signal-processing, electrical elements have a control circuit i.e. silicon on insulator (SOI)-chip, whose output voltage acts on the input. The circuit is controlled by input signals, and the electrical elements are arranged on a substrate common with the semiconductor or on a homogeneous substrate as the semiconductor. The elements are made of semiconductor materials.
机译:该模块在两个负载连接之间具有电连接,并且在功率半导体(1)的控制输入端之间在电连接和分离状态之间往复切换。主动和被动信号处理电子元件具有控制电路,即绝缘体上硅(SOI)芯片,其输出电压作用于输入端。该电路由输入信号控制,并且电气元件布置在与半导体共用的基板上或作为半导体的均质基板上。这些元件由半导体材料制成。

著录项

  • 公开/公告号DE102008035993A1

    专利类型

  • 公开/公告日2010-02-18

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20081035993

  • 发明设计人 BAYERER REINHOLD;STRZALKOWSKI BERNHARD;

    申请日2008-08-01

  • 分类号H01L25/16;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:50

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