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Power semiconductor module comprises a housing, connecting elements and an electrically insulated substrate arranged within the housing and semiconductor components with a connecting element and an insulating molded body
Power semiconductor module comprises a housing, connecting elements and an electrically insulated substrate arranged within the housing and semiconductor components with a connecting element and an insulating molded body
Power semiconductor module comprises a housing, connecting elements and an electrically insulated substrate arranged within the housing and semiconductor components (70) with a connecting element and an insulating molded body (80). The substrate comprises an insulated body (54) and connecting pathways (52) facing the inside of the module. A connection between a semiconductor component and a connecting element or between the semiconductor component and the connecting pathway is a pressure sintered connection. An independent claim is also included for a method for the production of a power semiconductor module.
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