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Semiconductor component, used in MOSFET, comprises semiconductor body, electrically and thermally conducting housing base surface, insulating layer, conducting connecting layer, casing, and connecting pins

机译:MOSFET中使用的半导体组件包括半导体主体,导电和导热的外壳底面,绝缘层,导电连接层,壳体和连接销

摘要

A semiconductor component comprises a semiconductor body (10); an electrically and thermally conducting housing base surface; a thermally conducting and electrically insulating layer (40) applied to the housing base surface; an electrically and thermally conducting connecting layer (50) arranged on the insulating layer; a casing (20) surrounding the semiconductor body; and connecting pins protruding from the casing. Preferred Features: The insulating layer is made from a metal oxide, thermally conducting adhesive or thermally conducting film. The semiconductor body is adhered or soldered to the connecting layer. The connecting layer consists of a metallic plate.
机译:半导体组件包括半导体本体(10);导电和导热的壳体底面;施加到壳体底面上的导热和电绝缘层(40);设置在绝缘层上的导电导热连接层(50);围绕半导体本体的壳体(20);从外壳突出的连接销。优选特征:绝缘层由金属氧化物,导热粘合剂或导热膜制成。半导体本体粘附或焊接到连接层上。连接层由金属板组成。

著录项

  • 公开/公告号DE10122191A1

    专利类型

  • 公开/公告日2002-08-22

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE10122191A

  • 发明设计人 GRAF ALFONS;KOZLOWSKI FRANK;

    申请日2001-05-08

  • 分类号H01L23/053;H01L23/495;

  • 国家 DE

  • 入库时间 2022-08-22 00:26:58

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