A method for determining the temperature gradient of a arranged on a substrate, first semiconductor power switch of a power semiconductor switch module and power conductor half conductor switch module

摘要

A method for determining the temperature gradient (lish (t)) of a on a substrate (3) arranged first semiconductor power switch (t1) of a power half conductor switch module (1) with the following process steps:a) determination of a substrate temperature course (tse (t)) of the substrate (3) by means of a on the substrate (3) of a temperature sensor arranged (18),b) determination of a fourier transform (f (tse (t))) by means of fourier transformation of the substrate temperature course (tse (t)),c) determining a frequency-dependent function of temperature (t1 (jω)) by means of multiplication of the fourier transform (f (tse (t))) with a determined frequency-dependent temperature transmission function (h1 (jω)), wherein the temperature transmission function (h1 (jω)) of the invention is to keep the frequency-dependent temperature transfer from the substrate temperature course of the temperature pattern of the first semiconductor power switch (t1) indicates in the frequency range,d) determining the temperature gradient (lish (t)) of the first semiconductor power switch (t1) by means of fourier back-transformation of the temperature function (t1 (jω)).