RESIST TREATMENT METHOD, RESIST COMPOSITION, SUBSTRATE WITH RESIST, MASK BLANKS WITH RESIST, METHOD OF MANUFACTURING THE SUBSTRATE WITH RESIST, AND METHOD OF MANUFACTURING MASK BLANKS WITH RESIST

摘要

PROBLEM TO BE SOLVED: To provide a pattern contrast that keeps high film remaining rate in a non-exposure section in a chemically amplified resist layer, and is high for the non-exposure section after development in the exposure section.;SOLUTION: The resist treatment method includes a process of forming the chemically amplified resist layer on a substrate, a process of applying pre exposure bake to the chemically amplified resist layer, a process of applying predetermined pattern exposure to the chemically amplified resist layer, and a process of applying post exposure bake to the chemically amplified resist layer. The pre exposure bake period is made longer than the post exposure bake.;COPYRIGHT: (C)2012,JPO&INPIT