RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS ; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION ; ELECTRONIC-DEVICE MANUFACTURING METHOD ; AND ELECTRONIC DEVICE

摘要

In the line width 50nm ultra-fine pattern formation that follows, sensitivity and high resolution, line edge roughness (LER) provide a small and pattern shape and is excellent in stability with time, and out gas generation also resist composition for a small semiconductor manufacturing process do. (A) a resist composition for semiconductor manufacturing processes which contains a compound represented by the general formula (I). In the general formula (I), R ¹ is, represents an alkyl group, cycloalkyl group or aryl group, R ² represents a monovalent organic group. R ³ ~ R ⁶ are, each represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a halogen atom. However, also R ³ and R ^4, R ⁴ and R ^5, or R ⁵ and R ⁶ is to form a cycloaliphatic or aromatic ring in combination. X is an oxygen atom or a sulfur atom.