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Silicon nitride film for light emitting element, light emitting element using the same, and method for manufacturing silicon nitride film for light emitting element
Silicon nitride film for light emitting element, light emitting element using the same, and method for manufacturing silicon nitride film for light emitting element
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机译:发光元件用氮化硅膜,使用其的发光元件以及发光元件用氮化硅膜的制造方法
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摘要
Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
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