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Low dielectric constant porous siliceous film, semiconductor device and coating composition, and method for producing low dielectric constant porous siliceous film
Low dielectric constant porous siliceous film, semiconductor device and coating composition, and method for producing low dielectric constant porous siliceous film
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机译:低介电常数多孔硅质膜,半导体器件和涂料组合物以及生产低介电常数多孔硅质膜的方法
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摘要
There is provided a porous silica coating, suitable for an interlayer dielectric, which stably exhibits an extremely low specific dielectric constant and which also has resistance to various chemicals and a mechanical strength allowing the coating to withstand the latest highly integrating process including a CMP process. The porous coating of the present invention is obtained by baking a coating of a composition comprising a polyalkylsilazane and a polyacrylic or polymethacrylic ester, and is characterized by having a specific dielectric constant of less than 2.5.
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