PROBLEM TO BE SOLVED: To obtain a porous siliceous film having a low dielectric constant, a semiconductor device containing the porous siliceous film and a coating composition giving the porous siliceous film. SOLUTION: The porous siliceous film is obtained by firing a film of a composition containing an aluminum-containing polysilazane and a poly(meth)acrylic ester and has a relative dielectric constant of 2.5. The semiconductor device contains the porous siliceous film as an interlayer dielectric. The coating composition contains the aluminum-containing polysilazane and the poly(meth)acrylic ester in an organic solvent.
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