LOW DIELECTRIC CONSTANT POROUS SILICA FILM, SEMICONDUCTOR DEVICE AND COATING COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a low dielectric constant porous silica film suited to layer insulation films which stably reveals a low dielectric constant and has a mechanical strength durable against the latest high degree integration process, including the CMP method and various chemicals resistances. SOLUTION: The porous silica film has a relative dielectric constant of less than 2.5 and is obtained by baking a film of a composition containing polyalkylsilazan and polyacrylic acid ester or polymetacrylic acid ester.