Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, R.O.C.;
Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, R.O.C.;
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C.;
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, R.O.C.;
Department of Materials Science, Feng-Chia University, Taichung, Taiwan, R.O.C.;
Department of Materials Science and Engineering, National Formosa University, Huwei, Taiwan, R.O.C.;
机译:Cu诱导多孔低介电常数膜的介电击穿
机译:预测多孔硅低介电常数薄膜有效介电常数的模型
机译:NH2官能化碳涂覆的Fe3O4核 - 壳纳米颗粒用于制备具有高介电常数,低介电损耗和高击穿强度的鲁棒聚酰亚胺复合膜的鲁棒聚酰亚胺复合膜
机译:Cu漂移对静态应力下多孔低介电常数膜介电击穿的影响
机译:使用正电子an没寿命光谱探测多孔低介电常数薄膜。
机译:外延PZT薄膜的静态本底介电常数值低
机译:用于描述老化的多孔硅低介电常数薄膜硬度变化的多层模型
机译:大介电常数液体的介电击穿分布