机译:Cu诱导多孔低介电常数膜的介电击穿
Natl Chi Nan Univ Dept Elect Engn Nan Tou Taiwan;
Natl Chi Nan Univ Dept Elect Engn Nan Tou Taiwan;
Natl Chi Nan Univ Dept Elect Engn Nan Tou Taiwan;
Natl Cheng Kung Univ Dept Elect Engn Tainan Taiwan;
Natl Cheng Kung Univ Dept Elect Engn Tainan Taiwan;
Feng Chia Univ Dept Mat Sci Taichung Taiwan;
Natl Formosa Univ Dept Mat Sci &
Engn Huwei Taiwan;
Vietnam Natl Univ Univ Sci Fac Mat Sci Ho Chi Minh City Vietnam;
Cu-induced dielectric breakdown; porous low-k dielectric films; alternating-current stress; direct-current stress; time to failure;
机译:Cu诱导多孔低介电常数膜的介电击穿
机译:预测多孔硅低介电常数薄膜有效介电常数的模型
机译:使用覆盖在多孔低介电常数SiOCH介电膜上的不同沉积前驱体比较SiC_xN_y势垒
机译:铜漂移对静态和动态应力下多孔低介电常数薄膜介电击穿的影响
机译:纳米多孔薄膜的介电击穿
机译:铝微电极单脉冲阳极氧化过程中氧化膜的放电行为和介电击穿
机译:用于描述老化的多孔硅低介电常数薄膜硬度变化的多层模型
机译:低介电常数甲基倍半硅氧烷薄膜中的辐射效应