METHOD OF FORMING CRYSTALLINE SILICON FILM, THIN-FILM TRANSISTOR USING THE SAME, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a crystalline silicon film for forming a crystalline silicon film stable in crystallinity by using a laser of a wavelength in a visible light region.;SOLUTION: This method of forming a crystalline silicon film includes: a first process of forming a metal film; a second process of forming an insulation film on the metal film; and a third process of forming a crystalline silicon film formed of polycrystalline Si on the insulation film. In the second process, the insulation film is formed in a film thickness range of 160-190 nm. The third process includes processes of: forming, on the insulation film, an amorphous silicon film formed of a-Si on the insulation film in a film thickness range of 30-45 nm; and forming the crystalline silicon film by irradiating the amorphous silicon film with laser light of a wavelength in a visible light region.;COPYRIGHT: (C)2011,JPO&INPIT