Group III nitride semiconductor electronic device, a method of fabricating the III nitride semiconductor electronic device, and a III nitride semiconductor epitaxial wafer

摘要

PPROBLEM TO BE SOLVED: To provide a group III nitride semiconductor electronic device having a structure that reduces a leakage current. PSOLUTION: A laminate 11 includes a substrate 13 and a group III nitride semiconductor epitaxial film 15. The substrate 13 is composed of a group III nitride semiconductor having a carrier concentration that exceeds 1×10SP18/SPcmSP-3/SP. An epitaxial structure 15 includes a group III nitride semiconductor epitaxial film 17. A primary surface 13a of the substrate 13 slants at the angle θ5° against an axis Cx that extends in a direction of a c axis. It forms an angle of θ with the normal vector VN and the c axis vector VC. The group III nitride semiconductor epitaxial film 17 includes primary, secondary, and tertiary regions 17a, 17b, and 17c arranged by turns in a normal direction of the primary surface 13a. The dislocation density of the tertiary region 17c is smaller than that of the primary region 17a. The secondary region 17b's dislocation density is larger than that of the substrate 13. PCOPYRIGHT: (C)2010,JPO&INPIT