Planar partial polarity (Al, In, Ga and B) for N based light-emitting diode MOCVD growth technology

摘要

A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9x109 cm-2. The III-nitride device is grown with an interruption time, between growth of the well layer and barrier layers, of more than 1 minute.