首页> 外文OA文献 >Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

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Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

机译：具有纳米级厚的Aln成核层对基于Algan的深紫外发光二极管的纳米级厚的Aln成核膜的高质量和无裂缝Aln膜的异质生长

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1. 227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire [J] . Hideki HIRAYAMA, Norihiko KAMATA, Norimichi NOGUCHI, Journal of Light & Visual Environment . 2008,第2期

机译：在蓝宝石上的高质量AlN缓冲层上制造的227-261 nm AlGaN基深紫外发光二极管
2. Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates [J] . Yusuke Sakai, Youhua Zhu, Shigeaki Sumiya, Japanese journal of applied physics . 2010,第2issue1期

机译：在高质量AlN模板上演示基于AlGaN的深紫外发光二极管
3. AlN gradient interlayer design for the growth of high-quality AlN epitaxial film on sputtered AlN/sapphire substrate [J] . Tan Bo, Hu Jiahui, Zhang Jun, CrystEngComm . 2018,第41期

机译：ALN梯度夹层设计，用于溅射ALN /蓝宝石衬底上高质量ALN外延膜的生长
4. Optimization of AlN substrate geometry for AlGaN-based deep-ultraviolet light-emitting diodes [C] . Manabu Taniguchi, Guo-Dong Hao, Kousei Nakaya, Conference on Lasers and Electro-Optics Pacific Rim . 2015

机译：基于AlGaN的深紫外发光二极管的AlN衬底几何形状的优化
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [O] . Jie Zhao, Hongpo Hu, Yu Lei, 2019

机译：蓝宝石衬底上具有纳米尺度厚AlN成核层的高质量无裂纹AlN薄膜的异质外延生长用于基于AlGaN的深紫外发光二极管
7. 227-261nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire [O] . Hideki HIRAYAMA, Tohru YATABE, Norimichi NOGUCHI, 2008

机译：227-261NM基于Algan的深度紫外发光二极管，在蓝宝石的高质量Aln缓冲区上制造

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

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