MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (AL, IN, GA, B)N BASED LIGHT EMITTING DIODES

摘要

A Ill-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III -nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9 x 109 cm-2. The Ill-nitride device is grown with an interruption time, between growth of the well layer and barrier layers, of more than 1 minute.