Substrate, III group nitride semiconductor epitaxial substrate, III group nitride semiconductor device and III group nitride semiconductor independent substrate, and these production manners for III group nitride semiconductor growth

摘要

An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050 C, but also with Al x Ga 1-x N, the growth temperature of which is high and which has a high Al composition and as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate and at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed ON the surface portion and the single metallic layer being made from Zr or Hf.