On the suffering etching backing material

摘要

PROBLEM TO BE SOLVED: To provide a dry etching method for etching an etched substrate directly without forming an etching mask of resist, or the like, on the etched substrate in which the etching mask is not required to be exfoliated after dry etching, and to provide an etching mask.;SOLUTION: The etching mask has such a structure as a supporting substrate 32 for holding a thin film substrate through an etching stop layer 33 used for forming an etching mask is provided on a thin film 31 having an etching pattern 45 and an alignment pattern 46 of a penetration mouth formed thereon, and a structure 39 for matching the distance to an etched substrate is provided on the side opposite to the supporting substrate, the supporting substrate and the patterning thin film are covered with a thin film layer 44 for preventing etching and enhancing etch selectivity, and then they are irradiated with etching plasma and when the etched substrate is etched, an etching protection layer 48 for preventing etching is formed through the alignment pattern of the penetration mouth near the penetration mouth of alignment on the supporting substrate side.;COPYRIGHT: (C)2007,JPO&INPIT