Study on an Atmospheric Pressure Plasma Jet and its Application in Etching Photo-Resistant Materials

摘要

An atmospheric pressure radio-frequency plasma jet that can eject cold plasma has been developed. In this paper, the configuration of this type of plasma jet is illustrated and its discharge characteristics curves are studied with a current and a voltage probe. A thermal couple is used to measure the temperature distribution along the axis of the jet stream. The temperature distribution curve is generated for the He/O2 jet stream at the discharge power of 150W. This jet can etch the photo-resistant material at an average rate of 100nm/min on the surface of silicon wafers at a right angle.