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RECESSED CHANNEL TRANSISTOR DEVICES, DISPLAY APPARATUSES INCLUDING RECESSED CHANNEL TRANSISTOR DEVICES, AND METHODS OF FABRICATING RECESSED CHANNEL TRANSISTOR DEVICES

机译:后退的晶体管装置,包括后退的晶体管装置的显示装置以及制造后退的晶体管装置的方法

摘要

Recessed channel transistor (RCT) devices, methods of manufacturing the RCT devices, and a display apparatuses including the RCT devices. A RCT device includes a substrate, a first trench in the substrate and having a first width; a first gate insulating layer on an inner wall of the first trench; a first recess gate on the first gate insulating layer and having a groove in a center portion of an upper surface of the first recess gate; and a source and drain in the substrate on both sides of the first recess gate.
机译:嵌入式沟道晶体管(RCT)器件,制造RCT器件的方法以及包括该RCT器件的显示装置。 RCT装置包括:衬底;在衬底中的第一沟槽,其具有第一宽度;以及第一沟槽,其具有第一宽度。在第一沟槽的内壁上的第一栅极绝缘层;第一凹入栅极在第一栅极绝缘层上并且在第一凹入栅极的上表面的中心部分中具有凹槽;在第一凹入栅极的两侧上的衬底中的源极和漏极。

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