Method of fabricating n-channel metal-oxide semiconductor transistor

摘要

A method of fabricating an NMOS transistor, in which, an epitaxial silicon layer is formed before a salicide process is performed, then a nickel layer needed for the salicide process is formed, and, thereafter, a rapid thermal process is performed to allow the nickel layer to react with the epitaxial silicon layer and the silicon substrate under the epitaxial silicon layer to form a nickel silicide layer.