LASER DIODE USING ASYMMETRIC QUANTUM WELLS

摘要

A laser diode using asymmetric quantum wells includes a N-type semiconductor, a P-type semiconductor, a first quantum well structure, and a second quantum well structure. The first quantum well structure is between the N-type semiconductor and the P-type semiconductor, and includes at least one first quantum well having a first thickness. The second quantum well structure is between the N-type semiconductor and the P-type semiconductor, and includes at least one second quantum well having a second thickness greater than the first thickness of the first quantum well and a lasing wavelength greater than that of the first quantum well. The second quantum well is formed with a spike therein.