Double junction or multiwell quantum diode, e.g. laser diode, for, e.g., high density data storage, has semiconductor layer deposited directly on substrate and intrinsically doped zinc oxide layer deposited on former layer by laser ablation

摘要

The diode has a p-type gallium nitride and magnesium (GaN:Mg) crystallized semiconductor layer (1) deposited directly on a c-aluminum oxide type substrate (2) by a metal-organic chemical vapor deposition method. An intrinsically doped zinc oxide layer (3) is deposited on the semiconductor layer (1) by laser ablation. Electrodes composed of nickel/gold layer and titanium/gold layer are deposited on the layers (1, 3). An independent claim is also included for a method for fabricating an ultraviolet light emitting diode.