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HIGH VOLTAGE-RESISTANT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING HIGH VOLTAGE-RESISTANT SEMICONDUCTOR DEVICE
HIGH VOLTAGE-RESISTANT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING HIGH VOLTAGE-RESISTANT SEMICONDUCTOR DEVICE
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机译:高耐压半导体装置和制造高耐压半导体装置的方法
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摘要
High voltage-resistant semiconductor devices adapted to control threshold voltage by utilizing threshold voltage variation caused by plasma damage resulting from the formation of multilayer wiring, and a manufacturing method thereof. Exemplary high voltage-resistant semiconductor devices include a plurality of MOS transistors having gate insulating films not less than about 350 Å in thickness on a silicon substrate, and the MOS transistors have different area ratios between gate electrode-gate insulating film contact areas and total opening areas of contacts formed on the gate electrodes.
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