Methods Of Plasma Etching Platinum-Comprising Materials, Methods Of Processing Semiconductor Substrates In The Fabrication Of Integrated Circuitry, And Methods Of Forming A Plurality Of Memory Cells

摘要

A platinum-comprising material is plasma etched by being exposed to a plasma etching chemistry that includes CHCl₃, CO₂ and O₂. In one embodiment, a method of processing a semiconductor substrate in the fabrication of integrated circuitry includes forming metallic platinum-comprising nanoparticles over a material. A portion of the nanoparticles is masked and another portion of the nanoparticles is unmasked. The unmasked portion of the metallic platinum-comprising nanoparticles is plasma etched using a plasma etching chemistry comprising CHCl₃, CO₂ and O₂. Other embodiments are disclosed.