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Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cells
Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cells
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机译:等离子刻蚀含铂材料的方法,在集成电路制造中处理半导体基板的方法以及形成多个存储单元的方法
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摘要
A platinum-comprising material is plasma etched by being exposed to a plasma etching chemistry that includes CHCl3, CO2 and O2. In one embodiment, a method of processing a semiconductor substrate in the fabrication of integrated circuitry includes forming metallic platinum-comprising nanoparticles over a material. A portion of the nanoparticles is masked and another portion of the nanoparticles is unmasked. The unmasked portion of the metallic platinum-comprising nanoparticles is plasma etched using a plasma etching chemistry comprising CHCl3, CO2 and O2. Other embodiments are disclosed.
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