Plasma Etching Process Simulation for MEMS and IC Fabrication based on a Cellular Automata Method

摘要

Mechanisms during plasma etching process in Micro-Electro-Mechanical Systems (MEMS) and Integrated Circuits (IC) fabrication have been analyzed. The plasma etching process has then been successfully simulated based on the plasma etching models and the cellular automata (CA) method for boundary movement simulation. Simulation results show an agreement with the available experimental results. This is useful for the research of plasma etching process and the development of MEMS and IC design.