Arrangement for monitoring and controlling of plasma etching process of workpiece, has image processing and simulation device that controls operation of ion beam source based on the measurement data of locator and detector array

摘要

The arrangement has a vacuum chamber (1) in which workpiece (4) is provided. An ion beam source (2) is coupled with vacuum chamber for supplying ion beam (3) with respect to workpiece. The position of the workpiece is measured by a locator (9). A detector array (17) is provided to collect light beam (14) reflected by the workppiece. An image processing and simulation device (18) is provided for controlling the operation of ion beam source based on measurement data (22) of locator and measurement data (23) of detector array.