Application of magnetic neutral loop discharge plasma in deep quartz and silicon etching process for MEMS/NEMS devices fabrication

摘要

Recently, deep quartz etching technologies to realize micro-opto-electromechanical systems (MOEMS) devices are required. And, silicon deep etching technology is also important. We report on the development of a novel etching system which micro and nano - electromechanical systems (MEMS/NEMS). Etching of quartz and silicon with one chamber using the newly NLD apparatus. The effective plasma production of the NLD method causes a low electron-temperature and high-density plasma in a low-pressure region below 1 Pa. This is one of the characteristics of the NLD plasma. The other important characteristic is controllability for uniform etching by changing the magnetic coil current radially and vertically [1,2]. A schematic of the NLD etching system is shown in Fig.1. Figure 2 shows the etching process flow, (a) KMPR (KAYAKU MICROCHEM Co.) or EB resist coating, (b) lithography, (c) NLD etching, respectively. KMPR has a same performance to a SU-8, and it is superior to SU-8 at the adhesion and crack on the silicon wafer, which were problems. Figure 3 shows KMPR pattern on the quartz substrate. The film thickness of KMPR was 50μm.