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Narrow channel width effect modification in a shallow trench isolation device
Narrow channel width effect modification in a shallow trench isolation device
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机译:浅沟槽隔离器件中的窄沟道宽度效应修正
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摘要
A method of manufacturing a semiconductor structure is provided. The method includes forming a hard mask pattern on a semiconductor substrate, wherein the hard mask pattern covers active regions; forming a trench in the semiconductor substrate within an opening defined by the hard mask pattern; filling the trench with a dielectric material, resulting in a trench isolation feature; performing an ion implantation to the trench isolation feature using the hard mask pattern to protect active regions of the semiconductor substrate; and removing the hard mask pattern after the performing of the ion implantation.
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